– First ever application of Gallium Nitride (GaN) in the design for portable headphone amplifiers – When employed in audio amplifiers, the result is enhanced transient response, dynamic range and absolute control precision – GaNFET features exceptionally low internal resistance, allowing for higher drive currents and maintaining detail, clear rhythm in a stable and impactful manner – Supporting higher operating frequencies means a reduction in interference caused by inductor ripple currents, resulting in crisp, analog imaging that is more naturally articulated – With switch speeds surpassing conventional MOSFETS by several tens of times, distortion is further reduced to bring out every delicate nuance for an immersive listening experience
